Electrical Activity of Boron and Phosphorus in Hydrogenated Amorphous Silicon
نویسندگان
چکیده
A. Pandey, B. Cai, N. Podraza, and D. A. Drabold Department of Physics and Astronomy, Condensed Matter and Surface Science Program, Ohio University, Athens, Ohio 45701, USA Department of Radiation Oncology, Washington University School of Medicine, St. Louis, Missouri 63108, USA Department of Physics and Astronomy, University of Toledo, Toledo, Ohio 43606, USA Department of Physics and Astronomy, Ohio University, Athens, Ohio 45701, USA (Received 18 June 2014; revised manuscript received 9 September 2014; published 7 November 2014)
منابع مشابه
Influence of post-hydrogenation upon electrical, optical and structural properties of hydrogen-less sputter-deposited amorphous silicon
Amorphous silicon (a Si) is common in the production of technical devices and can be deposited by several techniques. In this study intrinsic and doped, hydrogen less amorphous silicon films are RF magnetron sputter deposited and post hydrogenated in a remote hydrogen plasma reactor at a temperature of 370 °C. Secondary ion mass spectrometry of a boron doped (p) a Si layer shows that the concen...
متن کاملAmorphous silicon passivated contacts for diffused junction silicon solar cells
Articles you may be interested in Compositional study of defects in microcrystalline silicon solar cells using spectral decomposition in the scanning transmission electron microscope Appl. Influence of back contact roughness on light trapping and plasmonic losses of randomly textured amorphous silicon thin film solar cells Appl. Photocurrent increase in n-i-p thin film silicon solar cells by gu...
متن کاملAmorphous Silicon Flat Panel Imagers for Medical Application
A new gamma camera based on hydrogenated amorphous silicon (a-Si:H) pixel arrays to be used in nuclear medicine is introduced. Various performance characteristics of a-Si:H imagers are reviewed and compared with those of currently used equipment. An important component in the a-Si:H imager is the scintillator screen. A new approach for fabrication of high resolution CsI(Tl) scintillator layers,...
متن کاملBoron Doping of Hydrogenated Amorphous Silicon Prepared by rf-co-Sputtering
This paper addresses the doping mechanism of amorphous semiconductors through the investigation of boron doped rf co-sputtered amorphous hydrogenated silicon. The activation energy and room temperature conductivity varied from 0.9 to 0.3 eV and from 10 12 to 10 4 Ohm .cm , respectively, by ranging the boron concentration from 0 to 3 at.%. These ranges of electronic properties are of the same or...
متن کاملElectrical conductivity and Meyer–Neldel rule: The role of localized states in hydrogenated amorphous silicon
The Meyer–Neldel rule (MNR) has been observed in recent calculations of the electrical conductivity of hydrogenated amorphous silicon. To elucidate the origin of this effect, we have performed comparative studies on crystalline Si and non-hydrogenated a-Si. We find that the MNR is not present in the crystal, and is present in a-Si. This suggests that the existence of localized states and the en...
متن کامل